Evidence of donor–acceptor pair recombination from a new emission band in semiconducting diamond
- 18 April 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (16) , 2136-2138
- https://doi.org/10.1063/1.111710
Abstract
Steady state and time resolvedphotoluminescence studies of type IIb boron‐doped synthetic diamond reveal a new broad red emission band that exhibits many of the features of classic donor–acceptor pair recombination. This recombination is thought to be between an as‐yet unidentified neutral donor, possibly nitrogen related, approximately 3.6 eV below the conduction band edge and neutral boron acceptors at 0.37 eV above the valence band edge.Keywords
This publication has 11 references indexed in Scilit:
- Photoluminescence and cathodoluminescence studies of semiconducting diamondDiamond and Related Materials, 1993
- On the ‘‘band-A’’ emission and boron related luminescence in diamondApplied Physics Letters, 1992
- The characterisation of point defects in diamond by luminescence spectroscopyDiamond and Related Materials, 1992
- Cathodoluminescence and electroluminescence of undoped and boron-doped diamond formed by plasma chemical vapor depositionJournal of Applied Physics, 1990
- Cathodoluminescence and polarization studies from individual dislocations in diamondPhilosophical Magazine Part B, 1984
- Bound Excitons and Donor-Acceptor Pairs in Natural and Synthetic DiamondPhysical Review B, 1965
- Some properties of the visible luminescence excited in diamond by irradiation in the fundamental absorption edgeJournal of Physics and Chemistry of Solids, 1964
- Pair Spectra in GaPPhysical Review Letters, 1963
- Radiation Induced Changes in the Cathodoluminescence Spectra of Natural DiamondsProceedings of the Physical Society, 1960
- The Fluorescence of Diamonds Excited by X-RaysProceedings of the Physical Society, 1958