Electron Microscope Studies on the Etching of Irradiated Germanium
- 1 August 1959
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 30 (8) , 1279-1288
- https://doi.org/10.1063/1.1735306
Abstract
Electron microscope and electron diffraction studies on the surfaces of CP‐4 etched germanium specimens have shown that the changes in etching behavior induced by fast neutron irradiation occur as a result of a gross change in chemical behavior and cannot be due to local variations in the etching rate in the vicinity of the structural defects introduced by the irradiation. Observations on network structures which are produced under certain conditions of etching indicate that these arise as a result of mechanical preparation of the surfaces or from changes in the etching process and are apparently unrelated to any prior substructure in the material.This publication has 8 references indexed in Scilit:
- Surface Studies on Single-Crystal GermaniumJournal of Applied Physics, 1957
- Damage to Silicon Produced by Bombardment with Helium IonsJournal of Applied Physics, 1957
- Expansions in Reactor Irradiated Germanium and SiliconJournal of Applied Physics, 1957
- Etching Behavior of Pile-Irradiated Germanium and Silicon Single CrystalsJournal of Applied Physics, 1957
- Magnetic Susceptibility of GermaniumPhysical Review B, 1955
- The Germanium-Oxygen SystemThe Journal of Chemical Physics, 1954
- The Equilibrium Ge(s) + GeO2(s) = 2GeO(g). The Heat of Formation of Germanic OxideJournal of the American Chemical Society, 1952
- BERICHTE: Zur Frage der Chiffrierung der organischen VerbindungenZeitschrift für Naturforschung B, 1951