The Structure and Properties of the Semiconducting Compound ZnSnP2

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Abstract
The position of the P‐atom in the ordered structure of chalcopyrite type ZnSnP2 is determined: X = 0.239. Crystals with various degrees of ordering are obtained by varying the cooling rate of the melt during growth. The partly ordered crystals show a mosaic structure and consist of blocks having chalcopyrite or sphalerite structure. The dependence of the degree of ordering on the cooling rate is established. From measurements at room and liquid nitrogen temperature the Debye temperature is found to be the same for crystals with different degree of ordering. The mean‐square displacements of atoms as well as the microhardness increase with disordering, and may be related to defect formation. A decrease in the Hall mobility of holes is directly connected with the degree of disordering.

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