Raman effect and structure ofandthin epitaxial films
- 14 March 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (13) , 134109
- https://doi.org/10.1103/physrevb.63.134109
Abstract
The first-order Raman spectra of and thin epitaxial films deposited on substrates have been studied in the temperature range from 4 to 300 K. Several rather broad Raman lines from have been found. The linewidth becomes smaller with decreasing temperature and the lines are very distinct and sharp at 4 K. No indications for phase transitions are found. Isotopically exchanged samples give a clear indication that is at the origin of the Raman lines. Polarization resolved measurements together with a factor group analysis for all suggested crystal structures of reveals the number and the symmetry of the phonon modes. The number of observed modes is not compatible with a structure. Calculations of the angular dependence at different inclination angles result in predictions for characteristic intensity patterns for the suggested crystal structures. The measured angular intensity pattern show no indications for a structure. In measurements at different inclination angles new Raman lines appear, which points towards a or structure. Also the comparison of the energies of the lines in the Raman and in IR spectra promotes the picture of a noncentrosymmetric structure such as or
Keywords
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