EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS

1 November 1966

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 9 (9) , 344-346
https://doi.org/10.1063/1.1754779

Abstract

DC channel conductance of a number of experimental MOS transistor structures was measured and results used to calculate the surface state density and field-effect mobility. The mobility was found to increase with decreasing surface state concentration and to approach bulk mobility in samples with the lowest number of surface states. This behavior is shown to be consistent with Coulomb scattering by electrons trapped in surface states.

Keywords

This publication has 5 references indexed in Scilit:

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