Influence of the 7×7-1×1 phase transition on the sticking of oxygen on Si(111)
- 22 December 1989
- journal article
- Published by Elsevier in Chemical Physics Letters
- Vol. 164 (5) , 552-556
- https://doi.org/10.1016/0009-2614(89)85256-x
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Real-time study of oxygen reaction on Si(100)Physical Review Letters, 1987
- Effect of incidence kinetic energy and surface coverage on the dissociative chemisorption of oxygen on W(110)The Journal of Chemical Physics, 1986
- Laser irradiation of chemisorbed oxygen on Si(111): Electronic states and clump formation of SiO2Applied Physics A, 1986
- Metastable molecular precursor for the dissociative adsorption of oxygen on Si(111)Physical Review Letters, 1985
- Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffractionSurface Science, 1985
- The (7 × 7) ↔ (1 × 1) phase transition on Si(111)Surface Science, 1985
- Low energy electron diffraction beam profiles and phase transition at Si(111)-7 X 7 surfaceSurface Science, 1985
- On the phase transition between the (7 × 7) and (1 × 1) structures of silicon (111) surface studied by reflection electron microscopyUltramicroscopy, 1983
- Direct observation of the phase transition between the (7 × 7) and (1 × 1) structures of clean (111) silicon surfacesSurface Science, 1981
- Oxidation of Si(111), 7×7 and 2×1: A comparisonJournal of Vacuum Science and Technology, 1981