Characteristics of SiOF Films Formed by Remote Plasma Enhanced Chemical Vapor Deposition with SF6 Gas
- 1 June 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (6B) , L745
- https://doi.org/10.1143/jjap.35.l745
Abstract
The dielectric SiOF films were deposited by a simple technique which was SF6 gas addition to the TEOS based and SiH4 based Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD). The deposition rate decreased with increasing of the SF6 flow rate about 30 sccm. The refractive index decreased with increasing SF6 flow rate. The etch rate decreased down to 20 sccm, while in the case of above 20 sccm somewhat increased with increasing with SF6 flow rate. The peak position of the Si–O stretching mode gradually shifts to higher wave number with increasing of the SF6 flow rate. The dielectric constant decreased to 3.3. Gap filling and planarizability of the dielectric film formed by the TEOS with SF6 gas is better than that of the films made with conventional TEOS based.Keywords
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