Effect of oxygen vacancies on carrier localization in BaPb1−xBixO3
- 1 February 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 53 (8) , 691-694
- https://doi.org/10.1016/0038-1098(85)90379-5
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Epitaxial growth of superconducting BaPb1−xBixO3 thin filmsJournal of Applied Physics, 1984
- EXAFS of the superconducting oxide BaPb1−xBixO3Solid State Communications, 1984
- Real-Space and -Space Electron Pairing inPhysical Review Letters, 1981
- Superconductivity in the BaPb1−x Bi x O3 systemApplied Physics A, 1980
- Mixed-valent Ba2Bi3+Bi5+O6: structure and properties vs temperatureActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1979
- High-temperature superconductivity in the BaPb1-xBixO3 systemsSolid State Communications, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975