Deep diffusion doping of macroporous silicon
- 1 December 1999
- journal article
- Published by Pleiades Publishing Ltd in Technical Physics Letters
- Vol. 25 (12) , 958-961
- https://doi.org/10.1134/1.1262694
Abstract
An investigation is made of the diffusion of boron and phosphorus impurities in macroporous silicon with a regular structure of deep cylindrical pores, for which through doping of the walls was achieved. The ∼150 μm layers obtained were quasiuniformly doped and had a planar diffusion front, and their electric parameters were very similar to those of the doped single crystal. It is demonstrated that deep diffusion of phosphorus may be used to fabricate n-n + structures.Keywords
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