Delay time analysis for 0.4- to 5- mu m-gate InAlAs-InGaAs HEMTs
- 1 November 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (11) , 502-504
- https://doi.org/10.1109/55.63013
Abstract
InAlAs-InGaAs HEMTs with 0.4- to 5- mu m gate lengths have been fabricated and a maximum f/sub T/ of 84 GHz has been obtained by a device with a 0.4- mu m gate length. A simple analysis of their delay times was performed. It was found that gradual channel approximation with a field-dependent mobility model with E/sub c/ of 5 kV/cm holds for long-channel devices (L/sub g/>2 mu m), while a saturated velocity model with a saturated velocity of 2.7*10/sup 7/ cm/s holds for short-channel devices (L/sub g/<1 mu m).Keywords
This publication has 4 references indexed in Scilit:
- Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Time-of-flight measurement of electron velocity in an In0.52Al0.48As/In0.53Ga0.47As /In0.52Al0.48As double heterostructureApplied Physics Letters, 1990
- Importance of source and drain resistance to the maximum f/sub T/ of millimeter-wave MODFETsIEEE Electron Device Letters, 1989
- Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETsIEEE Transactions on Electron Devices, 1988