Defect-Trapping by Sn Atoms Implanted in Aluminum

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Abstract
The lattice locations of Sn atoms implanted in Al crystals were investigated by the channeling method. Sn atoms were implanted at room temperature and 150 kV at three different doses; 1×1014/cm2, 4×1014/cm2 and 1×1015/cm2. For all three doses, most of the Sn atoms were located at random (R) sites, i.e. in the precipitates. In the 1×1014/cm2 implantation, the remaining atoms were located at substitutional (S) sites and at slightly-displaced interstitial positions (I-sites). As the dose was increased to 4×1014/cm2, the occupancy of S- and I-sites decreased, while octahedral (O) and terahedaral (T) site occupancies were observed. In 1×1015/cm2 implantation, almost all the Sn atoms were at R-sites, with the remainder at S-sites. The I-site occupancy is interpreted as resulting from the trapping of a divacancy, and the O- and T-site occupancies from the trapping of more than two vacancies by an Sn atom.