Improvement of Gate Oxide Integrity Characteristics in CZ-Grown Si Crystals by H₂ annealing

Publisher Website

1 January 1992

journal article
Published by Springer Nature in MRS Proceedings

Vol. 262
https://doi.org/10.1557/proc-262-815

Abstract

No abstract available

Keywords

This publication has 1 reference indexed in Scilit:

Crystal-Originated Singularities on Si Wafer Surface after SC1 Cleaning
Japanese Journal of Applied Physics, 1990