Band-structure calculations of the two-photon absorption coefficients of GaAs, InP, CdTe, and ZnSe

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Abstract
The two-photon absorption coefficients of crystalline GaAs, InP, CdTe, and ZnSe at 1.064 and 0.694 μm are calculated by means of a new model which combines the elements of second-order perturbation theory and band-structure calculations. A sufficient number of intermediate states are included to ensure adequate convergence. This calculational procedure is shown to represent a significant improvement over currently available theoretical models, and the results are in good agreement with available experimental data.