Epitaxial photochemical deposition of II–VI semiconductors

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Abstract
The materials problems in the preparation of II–VI semiconductors are outlined, and the benefits of epitaxial growth at low temperatures are reviewed. The majority of the II–VI compounds have been prepared by pyrolytic metal–organic vapor phase epitaxy but relatively few have so far been produced by photolytic dissociation. ZnO has been deposited at room temperature using an excimer laser; improved electrical characteristics are claimed for the laser deposition. The majority of the effort on photodeposition has been with the infrared detector material, cadmium mercury telluride (CMT) and the related binaries, CdTe and HgTe. Good-quality epitaxial growth has been reported at temperatures as low as 250 °C for CMT and below 200 °C for HgTe. These growth temperatures enable the growth of more abrupt interfaces and lower metal vacancy concentrations.

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