Phosphorus concentration in hydrogenated amorphous silicon using ion-implanted references
- 1 November 1980
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science and Technology
- Vol. 17 (6) , 1306-1308
- https://doi.org/10.1116/1.570660
Abstract
The phosphorus content in glow-discharge deposited hydrogenated-amorphous silicon film has been determined using Auger electron spectroscopy. Precision low concentration phosphorus ion-implants into hydrogenated amorphous silicon were used as standards to accurately determine the sensitivity factor for phosphorus in hydrogenated amorphous silicon.Keywords
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