The growth of ferroelectric oxides by MOCVD

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Abstract
It has become increasingly desirable to integrate oxide dielectrics and transducers with the signal processing chips (silicon ICs). As a result there is a need to grow thin films of complex oxides, frequently ferroelectric, to perform these functions. Traditional processes such as sputtering have been tried and proven but many ferroelectric oxides have been found to be difficult to deposit as coherent crystalline films. Therefore, hybridisation of thin wafers obtained from bulk materials are frequently employed, e.g. pyroelectric and acoustic arrays. An alternative route to depositing good crystalline oxide materials is Metal Organic Chemical Vapour Deposition (MOCVD), a technique which has been used with considerable success in the deposition of compound semiconductors, but with little reported on its use for complex oxides. The reason for this is, to a large extent, the lack of suitable metal organic precursors for the required metal oxide constituents. This paper reviews the current status of MOCVD and related techniques for the deposition of complex oxides and describes how, with the appropriate organo-metallic precursors, thin film ferroelectric oxides can be grown.