Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched 30Si Layer
- 1 March 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (3A) , L181
- https://doi.org/10.1143/jjap.40.l181
Abstract
Si self-diffusion coefficients were measured in intrinsic and extrinsic silicon at 900°C using an isotopically enriched 30Si layer. 30Si profiles are determined by secondary ion mass spectrometry. Si self-diffusion is enhanced in a heavily B-doped sample, but differs little from intrinsic Si in heavily As or Sb-doped samples.Keywords
This publication has 6 references indexed in Scilit:
- Experimental evidence for a dual vacancy–interstitial mechanism of self-diffusion in siliconApplied Physics Letters, 1998
- Silicon Self-Diffusion in Isotope HeterostructuresPhysical Review Letters, 1998
- Self-Diffusion in Intrinsic and Extrinsic SiliconJournal of Applied Physics, 1967
- SILICON SELF-DIFFUSIONApplied Physics Letters, 1966
- Method for Determining Silicon Diffusion Coefficients in Silicon and in Some Silicon CompoundsPhysical Review Letters, 1966
- Self Diffusion in Intrinsic SiliconPhysica Status Solidi (b), 1966