Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices
- 10 May 2000
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 338-342, 1069-1072
- https://doi.org/10.4028/www.scientific.net/msf.338-342.1069
Abstract
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