Design considerations of high-efficiency GaAs IMPATT diodes

1 June 1973

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 20 (6) , 541-543
https://doi.org/10.1109/T-ED.1973.17695

Abstract

The efficiency and noise of p+n1n2n+GaAs IMPATT diodes have been studied as functions of the doping ratio n1/n2(when n1=n2we have a conventional abrupt p-n junction). For n1/n2>1 there are tradeoffs between efficiency and noise. At 12 GHz, for example, with a ratio of 4 the efficiency is 25 percent and the noise measure is 3 dB higher then that of a conventional IMPATT diode.

Keywords

DOPING
GALLIUM ARSENIDE
SIGNAL TO NOISE RATIO
TV
SCHOTTKY DIODES
NOISE MEASUREMENT
TEMPERATURE