Low temperature device creation in Si via fast Li electromigration
- 6 February 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (6) , 709-711
- https://doi.org/10.1063/1.114107
Abstract
Micrometer-sized homojunction structures can be formed by local application of strong electric fields (∼106 V/cm) at ambient temperatures to Si which was homogeneously doped n-type by Li. Such junctions show electroluminesence and two such junctions, arranged back to back, act as transistors, as evidenced by electron beam induced current, current-voltage and capacitance-voltage measurements. These results are explained by thermally-assisted electromigration of Li.Keywords
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