Orientation Effect in GaAs Injection Lasers
- 1 June 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (7) , 2596-2597
- https://doi.org/10.1063/1.1782090
Abstract
An orientation effect was found with regard to the emission patterns observed on GaAs injection lasers. The emission in the [11̄0] direction is considerably more uniform than that in the [110] direction. The beadiness observed on the (110) plane is believed to be due to linear low‐resistivity regions parallel to [110]. These result from zinc decoration of the misfit dislocations parallel to [110]. The absence of zinc decoration on the [11̄0] set of misfit dislocations can explain the absence of local bright spots and, thus, the more uniform emission in this direction.This publication has 3 references indexed in Scilit:
- Dislocations and Precipitates in GaAs Injection LasersJournal of Applied Physics, 1966
- Absorption Edge of Impure Gallium ArsenidePhysical Review B, 1965
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965