Electroabsorptive Fabry-Perot reflection modulators with asymmetric mirrors
- 1 September 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 1 (9) , 273-275
- https://doi.org/10.1109/68.43343
Abstract
A normally-on electroabsorptive surface-normal Fabry-Perot reflection modulator is reported with an on/off ratio of 22, insertion loss of 3.7 dB, and bandwidth of 3.4 nm for an operating voltage swing of 11 V. The asymmetric Fabry-Perot structure is made with asymmetric mirrors using a quarter-wavelength grating of 15 1/2-periods on the bottom and an air-semiconductor interface on the top. The active region is 1.4 mu m thick and composed of 100AA GaAs/100 A Al/sub 0.2/Ga/sub 0.8/As multiple quantum wells. The structure provides both high-efficiency and bandwidth for surface-normal modulators.Keywords
This publication has 7 references indexed in Scilit:
- Multiple Quantum-Well Asymmetric Fabry-Perot Etalons for High-Contrast, Low-Insertion-Loss Optical ModulationPublished by Optica Publishing Group ,1989
- Investigation of etalon effects in GaAs-AlGaAs multiple quantum well modulatorsIEE Proceedings J Optoelectronics, 1989
- Electrodispersive multiple quantum well modulatorApplied Physics Letters, 1988
- Electrically tunable Fabry–Perot mirror using multiple quantum well index modulationApplied Physics Letters, 1988
- Multiple quantum well (MQW) waveguide modulatorsJournal of Lightwave Technology, 1988
- Multiple quantum well reflection modulatorApplied Physics Letters, 1987
- Refractive index of Ga1−xAlxAsSolid State Communications, 1974