Anomalous migration of ion-implanted Al in Si
- 15 February 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (4) , 182-184
- https://doi.org/10.1063/1.88716
Abstract
Depth profiles for 60‐keV Al+ implanted in Si have been measured by SIMS analysis as a function of implant fluence and anneal temperature. A pronounced structure has been observed in the annealed profiles for fluences ⩾1015 cm−2. Comparison of the Al profiles with those of implanted B and Ga established that the structure is species dependent. The results of measurements designed to isolate damage effects indicate that the observed structure is induced by the reordering of the amorphous layer.Keywords
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