Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures
- 26 May 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (21) , 2790-2792
- https://doi.org/10.1063/1.119060
Abstract
Luminescence spectra of GaNepitaxial layers grown on sapphire display a strong intensity modulation of the below-band gap transitions and on the low-energy side of the near-band gap transition. The intensity modulation is attributed to a microcavity formed by the semiconductor–air and semiconductor–substrate interface. The microcavity effect is enhanced by using metallic reflectors which increase the cavity finesse. It is shown that microcavity effects can be used to determine the refractive index of the microcavity active material. Using this method, the GaNrefractive index is determined and expressed analytically by a Sellmeir fit.Keywords
This publication has 12 references indexed in Scilit:
- Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devicesJournal of Applied Physics, 1996
- Efficiency enhancement of microcavity organic light emitting diodesApplied Physics Letters, 1996
- Gallium vacancies and the yellow luminescence in GaNApplied Physics Letters, 1996
- An optically pumped GaN–AlGaN vertical cavity surface emitting laserApplied Physics Letters, 1996
- Activation energies of Si donors in GaNApplied Physics Letters, 1996
- Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxyJournal of Applied Physics, 1995
- Emerging gallium nitride based devicesProceedings of the IEEE, 1995
- Highly Efficient Light-Emitting Diodes with MicrocavitiesScience, 1994
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Determination of the thickness and optical constants of amorphous siliconJournal of Physics E: Scientific Instruments, 1983