{224} Plane X-Ray Diffraction Study of GaAs on Si Wafers Using a Conventional Double Crystal Diffractometer
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interfaceApplied Physics Letters, 1986
- Characterization of Lattice Defect Structures at GaAs/Si Interface by Transmission Electron MicroscopyJapanese Journal of Applied Physics, 1986