Measuring the intrinsic-base-region currents of a transistor
- 1 October 1967
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 3 (10) , 456-457
- https://doi.org/10.1049/el:19670361
Abstract
An experimental method of cancelling depletion-layer capacitance-current flow to permit exact observations of the current flow into the transistor ‘intrinsic base region’ is described.Keywords
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