Defect mechanisms in a-SiO2
- 27 September 1985
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 52 (3) , 371-377
- https://doi.org/10.1080/13642818508240608
Abstract
Atomic models of the intrinsic defects of amorphous SiO2 are used to review the following defect reactions: thermal generation and freezing in, atomic displacement during irradiation, photolysis by electron-hole recombination, bond rupture following charge trapping, and bond rupture during optical fibre drawing.Keywords
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