Large-signal operation of PIN IMPATT diodes for pulsed oscillators at millimetre-wave frequencies

19 August 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (17) , 737-739
https://doi.org/10.1049/el:19820500

Abstract

The specific RF power generation mechanism of PIN-IMPATT diodes at high current density as applied in pulsed operation is described and confirmed by a realistic computer model. It is shown that these devices can be operated at large-signal avalanche resonance, where they deliver relatively high output power at high impedance level.

Keywords

LARGE SIGNAL OPERATION
MILLIMETER-WAVE FREQUENCIES
PULSED OSCILLATORS
LARGE-SIGNAL AVALANCHE RESONANCE
PIN IMPATT DIODES
90 GHZ
MM-WAVE FREQUENCIES
RF POWER GENERATION MECHANISM
HIGH CURRENT DENSITY
MICROWAVE DIODE
COMPUTER MODEL

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