New ν(E) relationship for GaAs

9 May 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (10) , 453-454
https://doi.org/10.1049/el:19850323

Abstract

A new ν(E) relationship of GaAs has been developed, in which the nonequilibrium transport effects (or velocity overshoot effects) of electrons were included. It was observed that the peak electric field E_p, corresponding to the average peak electron velocity ν_p, and the saturation electron velocity ν_s increase with shortening of the length of GaAs devices, and that E_p decreases slightly with the decrease of the lattice temperature T_o.

Keywords

GAAS
PEAK ELECTRIC FIELD
AVERAGE PEAK ELECTRON VELOCITY
LATTICE TEMPERATURE
SATURATION ELECTRON VELOCITY
NONEQUILIBRIUM TRANSPORT EFFECTS
VELOCITY OVERSHOOT EFFECTS

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