Exciton thermalization in quantum-well structures
- 15 October 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (16) , 11817-11826
- https://doi.org/10.1103/physrevb.50.11817
Abstract
We show that a unified picture, namely, thermalization within the inhomogeneously broadened exciton band, can be used to explain the excitonic photoluminescence (PL) spectra in quantum wells independently of the presence, or lack thereof, of the low-energy shift of the PL line with respect to the absorption peak (Stokes shift). The Stokes shift itself turns out to be a mere consequence of the thermal equilibrium with a quadratic dependence on the absorption linewidth and a linear dependence on the inverse of the excitonic temperature. The predictions are found to be in excellent agreement with careful measurements in GaAs/ As single-quantum-well structures.
Keywords
This publication has 24 references indexed in Scilit:
- Temperature dependence of exciton lifetimes in GaAs/As single quantum wellsPhysical Review B, 1993
- Radiative lifetimes of excitons in quantum wells: Localization and phase-coherence effectsPhysical Review B, 1993
- Origin of the Stokes shift: A geometrical model of exciton spectra in 2D semiconductorsPhysical Review Letters, 1993
- Temperature dependence of the radiative and nonradiative recombination time in GaAs/As quantum-well structuresPhysical Review B, 1991
- Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniquesJournal of Applied Physics, 1991
- Radiative lifetime of free excitons in quantum wellsSolid State Communications, 1991
- Rapid radiative decay and enhanced optical nonlinearity of excitons in a quantum wellPhysical Review B, 1988
- Linewidth dependence of radiative exciton lifetimes in quantum wellsPhysical Review Letters, 1987
- Effect of temperature on exciton trapping on interface defects in GaAs quantum wellsPhysical Review B, 1985
- Low-temperature exciton trapping on interface defects in semiconductor quantum wellsPhysical Review B, 1984