Angular dependent negative magnetoresistance in Si-MOS (111) inversion layers
- 30 June 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 26 (11) , 701-703
- https://doi.org/10.1016/0038-1098(78)90723-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Galvanomagnetic Properties of n-Type InSb at Low Temperatures. I. Localization of Carriers and Metallic Impurity Conduction under Zero and Weak Magnetic FieldsJournal of the Physics Society Japan, 1977
- Negative Magnetoresistance in-Channel (100) Silicon Inversion LayersPhysical Review Letters, 1974
- Piezoresistance in Quantized Conduction Bands in Silicon Inversion LayersJournal of Applied Physics, 1971
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968
- Electric Conduction in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1967