Nature of Rectifying Junctions in α-Silicon Carbide
- 1 February 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (2) , 571-575
- https://doi.org/10.1063/1.1714032
Abstract
Rectifying junctions have been prepared in α‐SiC during crystal growth, from chromium solution, over a temperature range from 1700°–1900°C. From an observed systematic variation of junction capacitance at zero bias, with growth temperature, an effective diffusion coefficient Deff was computed. The temperature dependence of Deff yields an activation energy of 4.8 eV. This value is compared to an independently determined value of 4.9 eV for the diffusion of aluminum in αSiC. It is concluded that the structure of these junctions is dependent upon interdiffusion of the major dopants and therefore upon the temperature of crystal growth. The form of the experimentally determined forward current—voltage characteristics is shown to be in general agreement with the foregoing model.This publication has 6 references indexed in Scilit:
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