An Experimental Evaluation of X-Band Mixers using Dual-Gate GaAs Mesfets

1 October 1977

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 101-104
https://doi.org/10.1109/euma.1977.332410

Abstract

Experimental results are presented for X-band GaAs MESFET mixers using a dual-gate device. This device combines high conversion gain and low noise operation with the convenient feature that the RF and local oscillator signals can be applied to the separate gates. Biased near pinch off a one micron gate MESFET in a 'disc' tuned circuit has yielded 11 dB of conversion gain and 6.5 dB noise figure (DSB) at 10 GHz with an IF of 30 MHz. Using an IF of 150 MHz a noise figure of 5.2 dB with 8 dB of conversion gain has been obtained.

Keywords

This publication has 3 references indexed in Scilit:

Performance of Some GaAs Mesfet Mixers
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1976
GaAs f.e.t. mixer operation with high intermediate frequencies
Electronics Letters, 1976
Performance of GaAs MESFET Mixers at X Band
IEEE Transactions on Microwave Theory and Techniques, 1976