Organic thin-film transistors using suspended source/drain electrode structure

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Abstract
The electrical properties of triisopropylsilyl pentacene organic thin-film transistors such as field-effect mobility, on/off ratio, threshold voltage, and subthreshold slope were markedly improved by employing suspended source/drain (SSD) electrode structure. The SSD structure was fabricated by using Cr∕Au double layer where Cr was used as a sacrificial layer. Using the SSD structure, the field-effect mobility in the linear region increases from 0.007to0.29cm2∕Vs, on/off ratio from 104 to 107, threshold voltage decreases from +9to−3V, and subthreshold slope decreases from 4.5to0.6V∕decade.