MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrate
- 1 October 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 2 (10) , 241-243
- https://doi.org/10.1109/edl.1981.25418
Abstract
We report a process for the recrystallization of thin silicon films on silicon dioxide that uses a composite encapsulation layer of silicon dioxide and silicon nitride in conjunction with zone melting by a moveable strip heater. The recrystallization process achieves large-grainedKeywords
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