AN IMPROVED FULLY CMOS COMPATIBLE BIPOLAR STRUCTURE

1 September 1988

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 49 (C4) , C4-93
https://doi.org/10.1051/jphyscol:1988419

Abstract

A fully CMOS compatible bipolar technology is studied. 2-D process simulations of the device have been carried out before wafer processing ; comparisons of the results with experiments are presented. A new idea for making the collector, without standard epitaxy of a highly doped buried layer, is described. The 2-D simulation results enable the advantages to be checked with regard to the classical approach

Keywords

CMOS COMPATIBLE
IMPROVED FULLY
BIPOLAR STRUCTURE
FULLY CMOS
COMPATIBLE BIPOLAR

This publication has 0 references indexed in Scilit: