Resonant-cavity photodiode operating at 1.55 μm with Burstein-shifted In0.53Ga0.47As/InP reflectors
- 21 October 1996
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (17) , 2462-2464
- https://doi.org/10.1063/1.117498
Abstract
Traditionally, mirror design at the wavelengths important for fiber optic systems (1.3 and 1.55 μm) has suffered from the low refractive index step available between InP and its lattice‐matched alloys; the InP/In0.53Ga0.47As combination provides the largest index step, but at λ=1.55 μm absorption in the In0.53Ga0.47As layers degrades reflectivity. We have used the Burstein shift in n+:In0.53Ga0.47As to reduce the band‐to‐band absorption. This has yielded InP/In0.53Ga0.47As Bragg reflectors with reflectivity greater than 97%. These mirrors have been incorporated into a high‐efficiency resonant‐cavity photodetector operating at 1.55 μm.Keywords
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