Selective oxidation of silicon in low-temperature high-pressure steam
- 1 October 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 21 (10) , 636-640
- https://doi.org/10.1109/t-ed.1974.17982
Abstract
Silicon has been selectively oxidized in high-pressure steam up to 90 arm at 700°C using Si3N4as an oxidation mask. The rate of oxide growth onKeywords
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