Comparison of optical nonlinearities in piezoelectric strained [111]- and [001]-grown (In,Ga)As/(Al,Ga)As quantum wells
- 28 November 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (22) , 2771-2773
- https://doi.org/10.1063/1.112558
Abstract
The nonlinear absorption and refractive index spectra for [111]- and [001]-grown (In,Ga)As/(Al,Ga)As single strained-layer quantum-well structures are calculated, for different photogenerated carrier densities. Screening of the strain-induced electric field by photocarriers that have escaped from the [111]-grown quantum well is shown to produce a similar magnitude of nonlinear refractive cross section to that of the conventional [001]-grown quantum well.Keywords
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