Microcrystalline Silicon in a-SI:H Based Multljunction Solar Cells
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Materials issues central to the application of microcrystalline silicon (μc-Si) doped layers in a-Si:H based solar cells are discussed, which include: (1) characterization of ultra-thin layers to be incorporated in the device, and (2) methods to promote nucleation of μc-Si on desired substrates within a thickness on the order of ∼100Å. Successful application of (μc-Si) in multijunction a-Si:H based solar cells are demonstrated.Keywords
This publication has 5 references indexed in Scilit:
- In situ spectroellipsometry study of the nucleation and growth of microcrystalline siliconJournal of Applied Physics, 1991
- I n s i t u ellipsometry of thin-film deposition: Implications for amorphous and microcrystalline Si growthJournal of Vacuum Science & Technology B, 1989
- Optoelectronics and Photovoltaic Applications of Microcrystalline SicMRS Proceedings, 1989
- Properties of p+ microcrystalline films of SiC:H deposited by conventional rf glow dischargeApplied Physics Letters, 1988
- Enhancement of open circuit voltage in high efficiency amorphous silicon alloy solar cellsApplied Physics Letters, 1986