Frequency dispersion of transconductance and output resistance in GaAs MESFETs with low-temperature-grown GaAs passivation layers

4 March 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (5) , 499-501
https://doi.org/10.1049/el:19930334

Abstract

High-resistivity GaAs grown at low temperatures by molecular beam epitaxy was used as the surface passivation layer of MESFETs. When these MESFETs are biased in the saturation region, the frequency dispersions of the transconductance and output resistance are reduced compared to those of a MESFET without a passivation layer.

Keywords

GAAS
MESFET
SURFACE PASSIVATION
GAAS PASSIVATION LAYERS
MOLECULAR BEAM EPITAXY
SATURATION REGION
FREQUENCY DISPERSIONS
MBE
TRANSCONDUCTANCE
LOW-TEMPERATURE-GROWN
OUTPUT RESISTANCE

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