Cryogenic GaAs FET amplifier
- 7 June 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (12) , 506-508
- https://doi.org/10.1049/el:19840352
Abstract
An extremely low noise, cryogenic, gallium arsenide field-effect-transistor amplifier has been developed for the frequency range 3.7 to 4.2 GHz. The amplifier has an average noise temperature of 25 K, with an associated gain of 21 dB, when cooled to a physical temperature of 77 K.Keywords
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