Thermal resistance of gallium-arsenide field-effect transistors
- 1 January 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings G Circuits, Devices and Systems
- Vol. 136 (5) , 229-234
- https://doi.org/10.1049/ip-g-2.1989.0040
Abstract
The paper describes some thermal simulations for heat flow in gallium-arsenide field-effect transistors where the effects of surface metallisation and via holes are modelled. The results were found to be significantly different to those previously published, which were based on simpler physical models. The effects of surface metallisation were found to be important in modelling the thermal resistance but the effects of via holes less so, using current technological limitations.Keywords
This publication has 0 references indexed in Scilit: