Formation of a high quality two-dimensional electron gas on cleaved GaAs
- 23 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (17) , 1697-1699
- https://doi.org/10.1063/1.103121
Abstract
We have succeeded in fabricating a two‐dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si‐doped AlGaAs layers completes the modulation‐doped structure at the cleaved edge. Mobilities as high as 6.1×105 cm2/V s are measured in the 2DEG at the cleaved interface.Keywords
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