A Coplanar W-Band Power Amplifier MMIC Using Dual-Gate HEMTs
- 1 October 1999
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 246-249
- https://doi.org/10.1109/euma.1999.338319
Abstract
A two-stage monolithic W-band power amplifier has been developed, using 0.15 μm AlGaAs/InGaAs/GaAs dual-gate PM-HEMTs. The amplifier demonstrates a small signal gain of 15 dB and a maximum output power of 57 mW with an associated gain of 6 dB at 94 GHz. The circuit consists of two amplifier stages with a total gate width of 0.36 mm in the output stage. The use of coplanar technology and dual-gate HEMTs results in an over-all chip size of only l × 2 mm2.Keywords
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