Chemical modification of n-gallium arsenide photoanodes with group VIIIB metal ions: stability in contact with 1.0 M potassium hydroxide(aq)-0.10 M dipotassium selenide(aq) solutions and I-V properties in contact with 1.0 M potassium hydroxide(aq)-0.3 M dipotassium telluride(aq) electrolytes
- 1 November 1991
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry
- Vol. 95 (24) , 10133-10142
- https://doi.org/10.1021/j100177a092
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Erratum: Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions [Appl. Phys. Lett. 57, 1242 (1990)]Applied Physics Letters, 1990
- Studies of the gallium arsenide/potassium hydroxide-selenium ion (Se22-)/selenide semiconductor/liquid junctionThe Journal of Physical Chemistry, 1989
- Kinetic studies of carrier transport and recombination at the n-silicon methanol interfaceJournal of the American Chemical Society, 1986