Electroluminescence by impact excitation in ZnS:Mn and ZnSe:Mn Schottky diodes

1 April 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (4) , 434-436
https://doi.org/10.1109/T-ED.1981.20361

Abstract

Measurements have been made of the variation of the quantum efficiency of electroluminescence as a function of applied field in ZnS:Mn and ZnSe:Mn Schottky diodes. Under very high fields, the quantum efficiency unexpectedly reaches a maximum and then drops. An explanation is proposed which depends on the details of the band structures of ZnS and ZnSe.

Keywords

FUNCTION
ZNSE
BAND STRUCTURES
APPLIED FIELD
IMPACT EXCITATION
DIODES MEASUREMENTS
UNEXPECTEDLY REACHES