High‐Density 40 nm Diameter Sb‐Rich Bi2–xSbxTe3 Nanowire Arrays
- 16 June 2003
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 15 (12) , 1003-1006
- https://doi.org/10.1002/adma.200304781
Abstract
Arrays of 40 nm Bi2–xSbxTe3 nanowires (x ∼ 0.7, density ∼ 5 × 1010 cm–2) have been synthesized. The individual wires are crystalline, relatively homogeneous, and highly textured in a 〈110〉 direction after thermal treatment. Wires containing Sb exhibit incomplete wetting of the alumina templates in which they are grown (see Figure). The composition, crystallinity, and morphology of the nanowires can also be manipulated.Keywords
This publication has 17 references indexed in Scilit:
- Electrodeposition of Bi1-xSbxFilms and 200-nm Wire Arrays from a Nonaqueous SolventChemistry of Materials, 2003
- The Electrodeposition of High-Density, Ordered Arrays of Bi1-xSbx NanowiresJournal of the American Chemical Society, 2003
- Quantum Dot Superlattice Thermoelectric Materials and DevicesScience, 2002
- Insights into the Electrodeposition of Bi[sub 2]Te[sub 3]Journal of the Electrochemical Society, 2002
- Processing and Characterization of Single-Crystalline Ultrafine Bismuth NanowiresChemistry of Materials, 1999
- Experimental study of the effect of quantum-well structures on the thermoelectric figure of meritPhysical Review B, 1996
- Synthesis, properties and performances of electrodeposited bismuth telluride filmsJournal of Materials Chemistry, 1996
- Nanomaterials: A Membrane-Based Synthetic ApproachScience, 1994
- Effect of quantum-well structures on the thermoelectric figure of meritPhysical Review B, 1993
- Structural Features of Oxide Coatings on AluminumJournal of the Electrochemical Society, 1953