Bilevel Polysiloxane Resist For Ion-Beam And Electron-Beam Lithography

• 18 April 1985
• proceedings article
• Published by SPIE-Intl Soc Optical Eng
• Vol. 0539, 70
• https://doi.org/10.1117/12.947817

Abstract

Keywords

• OXYGEN
• IONS
• ELECTRONS
• LITHOGRAPHY
• ANISOTROPY
• GALLIUM
• SILICON
• REACTIVE ION ETCHING
• ETCHING