The temperature dependence of ferroelectric imprint
- 1 October 1995
- journal article
- characterization and-testing
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 10 (1-4) , 279-288
- https://doi.org/10.1080/10584589508012284
Abstract
Unidirectional voltage pulse stressing can induce a significant amount of asymmetry in the retention characteristics in certain LSCO/PLZT/LSCO thin films. A large asymmetry was developed within 1000 s of unidirectional pulsing with a 100-Hz (50% duty cycle) square wave at 125°C while no significant retention asymmetry was developed at 25°C in the same time frame. The change in respective switched and non-switched polarizations after voltage pulse stressing follow an Arrhenius behavior. The thermal activation energies (Ea) derived from the Arrhenius plots are Ea = 0.21 eV for the change in switched polarization and an Ea = 0.56 eV for the change in non-switched polarization.Keywords
This publication has 3 references indexed in Scilit:
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